VISHAY SIRA74DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA74DP-T1-GE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)41nC@10V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)81.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation46.2W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)6.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

40V 81.2A 2.4V 46.2W 6.1mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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