VISHAY · FETs & Power MOSFETs · MPN SIRA66DP-T1-GE3
No reviews yet — be the first to review VISHAY SIRA66DP-T1-GE3.
| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.014nF |
30V 50A 2.2V 40W 2.3mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS