VISHAY · FETs & Power MOSFETs · MPN SIRA64DP-T1-GE3
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| Gate Charge(Qg) | 19.7nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.42nF |
30V 37A 2.2V 2.1mΩ@10V 1 N-channel PowerPAK-SO-8-Single Single FETs, MOSFETs RoHS