VISHAY SIRA62DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIRA62DP-T1-RE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)93nC@10V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation65.7W
Reverse Transfer Capacitance (Crss@Vds)202pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.46nF
TypeN-Channel

Technical details

N-Channel 30V 80A 65.7W Surface Mount PowerPAK-SO-8

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