VISHAY · FETs & Power MOSFETs · MPN SIRA58DP-T1-GE3
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 185A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF |
| RDS(on) | 2.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.45nF |
185A 2.2V 2.65mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS