VISHAY · FETs & Power MOSFETs · MPN SIRA54DP-T1-GE3
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| Gate Charge(Qg) | 48nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 32.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 4.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 2.35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.3nF |
40V 32.2A 2.3V 4.4W 2.35mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS