VISHAY · FETs & Power MOSFETs · MPN SIRA52DP-T1-GE3
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| Gate Charge(Qg) | 47.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 39.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.15nF |
40V 39.6A 1.1V 1.7mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS