VISHAY · FETs & Power MOSFETs · MPN SIRA52ADP-T1-RE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 32nC@4.5V |
| Output Capacitance(Coss) | 67pF |
| Current - Continuous Drain(Id) | 131A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 30.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| RDS(on) | 2.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.086nF |
| Type | N-Channel |
40V 131A 2.4V 30.7W 2.3mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS