VISHAY · FETs & Power MOSFETs · MPN SIRA50DP-T1-RE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 59.2nC@10V |
| Current - Continuous Drain(Id) | 62.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.445nF |
40V 62.5A 2.2V 6.25W 1mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS