VISHAY · FETs & Power MOSFETs · MPN SIRA32DP-T1-RE3
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| Gate Charge(Qg) | 24.3nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 1.32nF |
| Current - Continuous Drain(Id) | 185A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.45nF |
| Type | N-Channel |
N-Channel 25V 185A 65.7W Surface Mount SO-8