VISHAY · FETs & Power MOSFETs · MPN SIRA28BDP-T1-GE3
No reviews yet — be the first to review VISHAY SIRA28BDP-T1-GE3.
| Gate Charge(Qg) | 4.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 582pF |
30V 38A 2.4V 3.8W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS