VISHAY · FETs & Power MOSFETs · MPN SIRA26DP-T1-RE3
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 30.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 2.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.247nF |
25V 30.3A 2.5V 3.9W 2.65mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS