VISHAY SIRA24DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA24DP-T1-GE3

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)1.015nF
Current - Continuous Drain(Id)44.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.65nF
TypeN-Channel

Technical details

N-Channel 25V 44.5A 5W Surface Mount PowerPAK-SO-8-Single

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