VISHAY · FETs & Power MOSFETs · MPN SIRA18DP-T1-RE3
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| Gate Charge(Qg) | 21.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 9.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
30V 33A 1.2V 9.4W 7.5mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS