VISHAY · FETs & Power MOSFETs · MPN SIRA18DDP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6.2nC |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 266pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 17W |
| RDS(on) | 6.83mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
| Vgs | ±20V |
30V 40A 2.4V 17W 6.83mΩ@10V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS