VISHAY · FETs & Power MOSFETs · MPN SIRA18BDP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 19nC@10V |
| Output Capacitance(Coss) | 266pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 11W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 6.83mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 680pF |
| Type | N-Channel |
N-Channel 30V 40A 11W Surface Mount PowerPAKSO-8