VISHAY · FETs & Power MOSFETs · MPN SIRA16DP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.06nF |
30V 16A 2.3V 3.9W 6.8mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS