VISHAY SIRA14BDP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA14BDP-T1-GE3

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Specifications

Gate Charge(Qg)6.6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)389pF
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)5.38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)917pF
TypeN-Channel

Technical details

N-Channel 30V 64A 36W Surface Mount PowerPAKSO-8

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