VISHAY SIRA12DDP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA12DDP-T1-GE3

No reviews yet — be the first to review VISHAY SIRA12DDP-T1-GE3.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)545pF
Current - Continuous Drain(Id)81A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)5.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.42nF
TypeN-Channel

Technical details

N-Channel 30V Surface Mount PowerPAKSO-8

Related FETs & Power MOSFETs