VISHAY · FETs & Power MOSFETs · MPN SIRA12BDP-T1-GE3
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 545pF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
| Type | N-Channel |
30V 27A 2.4V 38W 4.3mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS