VISHAY SIRA10DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIRA10DP-T1-GE3

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Specifications

Gate Charge(Qg)15.4nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.425nF
TypeN-Channel

Technical details

N-Channel 30V 60A 40W Surface Mount PowerPAKSO-8

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