VISHAY · FETs & Power MOSFETs · MPN SIRA01DP-T1-GE3
No reviews yet — be the first to review VISHAY SIRA01DP-T1-GE3.
| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 4.9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.49nF |
| Type | P-Channel |
30V 60A 2.2V 40W 4.9mΩ@10V 1 P-Channel P-Channel SO-8 Single FETs, MOSFETs RoHS