VISHAY · FETs & Power MOSFETs · MPN SIRA00DP-T1-RE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 66nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.7nF |
30V 100A 1.1V 66.6W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS