VISHAY · FETs & Power MOSFETs · MPN SIR882DP-T1-GE3
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| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 11.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.93nF |
| Type | N-Channel |
100V 60A 2.8V 45W 11.5mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS