VISHAY · FETs & Power MOSFETs · MPN SIR882ADP-T1-GE3
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| Gate Charge(Qg) | 19.5nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 5.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.975nF |
N-Channel 100V 60A 5.4W Surface Mount SO-8