VISHAY SIR880BDP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR880BDP-T1-RE3

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Specifications

Gate Charge(Qg)19.5nC@4.5V
Drain to Source Voltage80V
Current - Continuous Drain(Id)70.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation5W
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.93nF

Technical details

N-Channel 80V 70.6A 5W Surface Mount PowerPAKSO-8

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