VISHAY SIR880ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR880ADP-T1-GE3

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Specifications

Gate Charge(Qg)24nC@7.5V
Drain to Source Voltage80V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)20.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation5.4W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)6.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.289nF
TypeN-Channel

Technical details

N-Channel 80V 20.7A 5.4W Surface Mount PowerPAKSO-8

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