VISHAY SIR876ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR876ADP-T1-GE3

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)14.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.63nF
TypeN-Channel

Technical details

N-Channel 100V 40A 62.5W Surface Mount PowerPAKSO-8

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