VISHAY SIR873DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR873DP-T1-GE3

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Specifications

Gate Charge(Qg)31.8nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation66.6W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)47.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.805nF

Technical details

P-Channel 150V 29A 66.6W Surface Mount PowerPAKSO-8

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