VISHAY · FETs & Power MOSFETs · MPN SIR873DP-T1-GE3
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| Gate Charge(Qg) | 31.8nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 47.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.805nF |
P-Channel 150V 29A 66.6W Surface Mount PowerPAKSO-8