VISHAY SIR872DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR872DP-T1-GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)31.5nC@10V
Current - Continuous Drain(Id)-
Pd - Power Dissipation66.6W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)20mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.13nF

Technical details

150V 66.6W 20mΩ@7.5V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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