VISHAY SIR872ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR872ADP-T1-GE3

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Specifications

Gate Charge(Qg)22.8nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation66.6W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)23mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.286nF

Technical details

150V 45A 2.5V 66.6W 23mΩ@7.5V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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