VISHAY · FETs & Power MOSFETs · MPN SIR871DP-T1-GE3
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| Gate Charge(Qg) | 26.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.395nF |
100V 48A 1.4V 5.2W 20mΩ@10V 1 P-Channel PowerPAK-SO-8-Single Single FETs, MOSFETs RoHS