VISHAY · FETs & Power MOSFETs · MPN SIR870DP-T1-GE3
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| Gate Charge(Qg) | 26.7nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.475nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 99pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.84nF |
| Type | N-Channel |
N-Channel 100V 60A 66.6W Surface Mount PowerPAK-SO-8