VISHAY · FETs & Power MOSFETs · MPN SIR862DP-T1-GE3
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 28.4nC@4.5V |
| Output Capacitance(Coss) | 344pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 890pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
| Type | N-Channel |
25V 50A 2.3V 69W 3.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS