VISHAY · FETs & Power MOSFETs · MPN SIR846DP-T1-GE3
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| Gate Charge(Qg) | 35.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 66.6W |
| RDS(on) | 7.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.87nF |
100V 60A 3.5V 66.6W 7.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS