VISHAY · FETs & Power MOSFETs · MPN SIR846ADP-T1-GE3
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| Gate Charge(Qg) | 26.7nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
100V 60A 1.8V 53W 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS