VISHAY · FETs & Power MOSFETs · MPN SIR836DP-T1-GE3
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| Gate Charge(Qg) | 5.8nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 15.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
N-Channel 40V 21A 15.6W Surface Mount PowerPAK-SO-8