VISHAY · FETs & Power MOSFETs · MPN SIR826DP-T1-RE3
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| Gate Charge(Qg) | 27.9nC@40V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 4.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
80V 60A 1.2V 6.25W 4.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS