VISHAY · FETs & Power MOSFETs · MPN SIR826BDP-T1-RE3
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 80.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 17.5pF |
| RDS(on) | 5.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.03nF |
80V 80.8A 2V 5W 5.1mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS