VISHAY · FETs & Power MOSFETs · MPN SIR826ADP-T1-GE3
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| Gate Charge(Qg) | 25nC@7.5V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 23.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
N-Channel 80V 23.8A 6.25W Surface Mount PowerPAKSO-8