VISHAY · FETs & Power MOSFETs · MPN SIR820DP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 28.6nC@10V |
| Current - Continuous Drain(Id) | 23.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 4.6W |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.65nF |
30V 23.5A 1.2V 4.6W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS