VISHAY · FETs & Power MOSFETs · MPN SIR818DP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 30.5nC@10V |
| Current - Continuous Drain(Id) | 509A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.66nF |
30V 509A 1V 44W 2.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS