VISHAY SIR804DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR804DP-T1-GE3

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)20.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation66.6W
RDS(on)7.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.45nF

Technical details

100V 20.8A 1.2V 66.6W 7.2mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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