VISHAY · FETs & Power MOSFETs · MPN SIR802DP-T1-GE3
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 460pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 27.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 7.6mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.785nF |
| Type | N-Channel |
N-Channel 20V 30A 27.7W Surface Mount PowerPAK-SO-8