VISHAY SIR800DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR800DP-T1-RE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)41nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.125nF

Technical details

20V 50A 1.5V 69W 2.3mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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