VISHAY SIR800DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR800DP-T1-GE3

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Specifications

Gate Charge(Qg)133nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)1.05nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)510pF
RDS(on)3.4mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)5.125nF
TypeN-Channel

Technical details

N-Channel 20V 50A 69W Surface Mount PowerPAK-SO-8

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