VISHAY SIR800ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR800ADP-T1-RE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)18.2nC@10V
Current - Continuous Drain(Id)50.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation5W
RDS(on)1.35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)72pF
Number1 N-channel
Input Capacitance(Ciss)3.415nF

Technical details

20V 50.2A 1.5V 5W 1.35mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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