VISHAY · FETs & Power MOSFETs · MPN SIR800ADP-T1-GE3
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| Gate Charge(Qg) | 27.5nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 50.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 1.35mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.415nF |
N-Channel 20V 50.2A 5W Surface Mount PowerPAKSO-8