VISHAY · FETs & Power MOSFETs · MPN SIR770DP-T1-GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 21mΩ@10V |
| Pd - Power Dissipation | 11.4W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 900pF |
| Gate Charge(Qg) | 6.6nC@15V |
| Operating Temperature | -55℃~+150℃ |
8A 21mΩ@10V 11.4W 1.2V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS