VISHAY SIR698DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR698DP-T1-GE3

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Specifications

Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation14.8W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)195mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)210pF

Technical details

100V 7.5A 14.8W Surface Mount PowerPAK-SO-8

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